Power mosfet transistor:TO-220-3L Plastic-Encapsulate
FEATURE:Schottky Barrier Chip
Average rectified output current:10A
Power mosfet transistor:TO-220-3L Plastic-Encapsulate Diodes
DC blocking voltage:150/200v
Average rectified output current:10A
Power mosfet transistor:TO-263-2L Plastic-Encapsulate Diodes
Type:Schottky Bridge Rectifier
FEATURE:Low Power Loss , High Efficiency
Power mosfet transistor:TO-220-3L Plastic-Encapsulate Diodes
Powerdissipation:2W
IFSM:150a
Power mosfet transistor:TO-220-3L Plastic-Encapsulate Diodes
Average rectified output current:10 A
IFSM:150a
Power mosfet transistor:TO-220-3L Plastic-Encapsulate Diodes
Type:Schottky Barrier Chip
Use:High Frequency Inverters
Power mosfet transistor:TO-220-3L Plastic-Encapsulate Diodes
Type:Schottky Barrier Chip
Power dissipation:2 W
Type:Schottky Barrier Chip
Average rectified output current:20A
Working peak reverse voltage:30-60V
Power mosfet transistor:TO-220-3L Plastic-Encapsulate Diodes
FEATURE:High Surge Capability
DC blocking voltage:30-50v
Power mosfet transistor:TO-220F Plastic-Encapsulate
FEATURE:Low Power Loss,High Efficiency
Storage temperature:-55~+150℃